Flash Lamp Annealing - From Basics to Applications

Preface

Acknowledgements

References

Contents

Acronyms

Symbols

1 Introduction

1.1 Historical Remarks

1.2 The Thermal Cycle

1.3 Short Time Annealing

References

2 The Technology of Flash Lamp Annealing

2.1 Basic Structure of an FLA Tool

2.2 Components of a Flash Lamp

2.2.1 Dimensions and Gas Filling

2.2.2 Electrodes

2.2.3 The Envelope

2.2.4 Cooling

2.3 Plasma Discharge

2.3.1 Trigger Pulse and Initial Streamer Formation

2.3.2 Arc Expansion

2.3.3 Plasma Properties in the Wall-Stabilized Regime

2.3.4 The Post-discharge Period

2.4 Electric Operation

2.4.1 Electric Characteristics of a Flash Lamp

2.4.2 Circuitries

2.4.3 Modelling of a Single RLC Section Circuit

2.4.4 Active Pulse Shaping

2.5 Optical Output

2.5.1 The Plasma Spectrum

2.5.2 Transparency and Radiation Pattern

2.5.3 Time-Resolved Optical Properties

2.5.4 Shaping the Spectral Output

2.6 Flash Lamp Lifetime

2.6.1 Single and Multiple Flash Operation

2.6.2 Lamp Failure

2.6.3 Lamp Degradation

2.7 Layout of FLA Tools

2.7.1 From Sheet-to-Sheet to Roll-to-Roll Processes

2.7.2 Flash-Assisted Deposition

References

3 Process Management

3.1 Temperature Measurement

3.1.1 Pyrometry

3.1.2 Temperature Measurement of Semiconductors

3.1.3 Temperature Measurement During Annealing of Non-semiconductors

3.1.4 True Temperature Measurement

3.2 Temperature Simulations

3.2.1 Mathematical Background

3.2.2 Chamber Wall Reflection

3.2.3 Temperature Profiles

3.2.4 Heat Dissipation

3.3 Homogeneity

3.3.1 The Homogeneity of Irradiation

3.3.2 Pattern Effects

3.4 Thermal Stress

3.4.1 Silicon

3.4.2 Glassy Substrates and Thin Films

3.5 Further Effects

References

4 Semiconductor Applications

4.1 Defect Engineering

4.1.1 Defect Evolution During Annealing

4.1.2 Boron Diffusion in Si

4.1.3 Studies Related to Flash Lamp Annealing

4.2 Doping

4.2.1 Ultra-Shallow Junctions in Silicon

4.2.2 Hyperdoping in Silicon

4.2.3 Doping and Superconductivity in Germanium

4.2.4 Doping of Silicon Carbide

4.2.5 Doping of III–V Compound Semiconductors

4.2.6 Diluted Magnetic Semiconductors

4.3 Crystallization

4.3.1 Non-equilibrium Crystallization Modes

4.3.2 Thin Films of Amorphous Silicon

4.3.3 Silicon Compound Semiconductors

4.4 Semiconductor Nanostructures

4.4.1 Group IV Nanocluster

4.4.2 Integration of III–V Nanocrystals into Silicon

4.4.3 Nanowires

References

5 Beyond Semiconductors

5.1 Dielectric Thin Films

5.1.1 High-k Materials

5.1.2 Rare Earth Doping of SiO2

5.2 Photovoltaic Applications

5.2.1 Mono- and Polycrystalline Solar Cells

5.2.2 Thin Film Solar Cells

5.3 Transparent Conducting Oxides

5.3.1 Zinc Oxide

5.3.2 Titanium Oxide

5.3.3 Indium Tin Oxide

5.3.4 Other TCOs and Beyond

5.4 Metallic Films

5.4.1 Annealing of Thin Metal Films

5.4.2 Material Property Engineering

5.4.3 Silicides

5.4.4 Printed Electronics

5.4.5 Further Applications

5.5 Flexible Substrates

5.5.1 State of the Art

5.5.2 Ink-Environment Interaction

5.5.3 Ink-Substrate Interaction

References

Index